The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 1998
Filed:
Nov. 18, 1996
Applicant:
Inventors:
Yih-Jau Chang, Hsinchu, TW;
Shye-Lin Wu, Hsinchu, TW;
Assignee:
Powerchip Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438253 ; 438255 ;
Abstract
The present invention is a method of manufacturing porous-Si capacitors for use in semiconductor memories. The present invention uses a silicon oxide layer as an etching mask to etch a polysilicon layer to form a porous-Si structure. The etching process is performed to etch a portion of the polysilicon layer and to etch away the remaining HSG-Si. Next, an oxide layer which is in micro grooves is removed to define a porous-Si bottom storage. The present invention can be used to increase the surface area of the capacitor.