The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 1998
Filed:
May. 29, 1996
Ryo Hayashi, Tsukuba, JP;
Yasushi Fujioka, Nara, JP;
Shotaro Okabe, Nara, JP;
Masahiro Kanai, Tokyo, JP;
Jinsho Matsuyama, Soraku-gun, JP;
Akira Sakai, Soraku-gun, JP;
Yuzo Koda, Tsuzuki-gun, JP;
Tadashi Hori, Nara, JP;
Takahiro Yajima, Soraku-gun, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided are a photovoltaic element suitable for practical use, low in cost, high in reliability, and high in photoelectric conversion efficiency, and a fabrication process thereof. In the photovoltaic element having stacked layers of non-single-crystal semiconductors, at least an i-type semiconductor layer and a second conductivity type semiconductor layer are stacked on a first conductivity type semiconductor layer, and the second conduction type semiconductor layer has a layer A formed by exposing the surface of the i-type semiconductor layer to a plasma containing a valence electron controlling agent and a layer B deposited on the layer A by a CVD process using at least the valence electron controlling agent and the main constituent elements of the i-type semiconductor layer.