The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 1998
Filed:
Sep. 10, 1996
Applicant:
Inventors:
Satoshi Hibino, Hamamatsu, JP;
Takahisa Yamaha, Hamamatsu, JP;
Assignee:
Yamaha Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437188 ; 437192 ; 437194 ; 437195 ;
Abstract
A method of manufacturing a semiconductor device having the steps of: forming an insulating layer on a substrate having a semiconductor surface; forming a contact hole in and through the insulating layer; forming a conductive film on the inner surface of the contact hole and on the surface of the insulating film; forming a vapor deposited titanium film on the inner wall of a vacuum chamber; placing the substrate formed with the conductive film in the vacuum chamber; and heating the substrate and reflowing the conductive film. A good wiring layer can be formed by suppressing generation of a void during a reflow process.