The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1998
Filed:
Oct. 13, 1995
Naoshi Itabashi, Hachioji, JP;
Kozo Mochiji, Tokorozawa, JP;
Hiroyasu Shichi, Tanashi, JP;
Seiji Yamamoto, Hachioji, JP;
Satoshi Osabe, Kokubunji, JP;
Keiichi Kanehori, Sayama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A surface analyzing method comprising an ion generation step for generating multiply-charged ions of specific ion species and specific charge state; a deceleration step for decelerating the generated multiply-charged ions to a lower kinetic energy than an energy of threshold of sputtering of an objective material; an irradiation step for irradiating the decelerated multiply-charged ions on the surface of a sample; and an analysis step for analyzing particles or light emitted from the surface of said sample by the irradiation of said multiply-charged ions. Apparatus is provided for carrying out the method. Since the ions irradiated on the sample surface are multiply-charged ions having a lower kinetic energy than that of threshold of sputtering of materials constituting a sample, the irradiated ions interact merely with the top surface layer of the sample whereby analyzed information merely from the top surface layer of the sample can be obtained, and as a result, the kind of atoms of the top surface layer of the sample and the bonding state of said atoms can be analyzed with high sensitivity and high resolution.