The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1998
Filed:
Jan. 29, 1996
Applicant:
Inventor:
Shizuo Oguro, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438486 ; 438482 ; 438488 ;
Abstract
A method of forming a thin semiconductor film including an impurity for obtaining a conductivity includes the step of depositing a thin amorphous silicon film by chemical vapor deposition using silane as a deposition source gas at a deposition rate of at least 3 nm/minute while introducing the impurity, and the step of crystallizing the deposited thin amorphous silicon film by annealing.