The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1998
Filed:
Mar. 31, 1995
Matagoro Maeno, Izumi, JP;
Masayuki Miyashita, Sakai, JP;
Hirohisa Kikuyama, Nara, JP;
Tatsuhiro Yabune, Sendai, JP;
Jun Takano, Sakai, JP;
Hirofumi Fukui, Miyagi-ken, JP;
Satoshi Miyazawa, Sendai, JP;
Chisato Iwasaki, Miyagi-ken, JP;
Tadahiro Ohmi, Otsuka-cho, Ota-ku, Tokyo, JP;
Yasuhiko Kasama, Sendai, JP;
Hitoshi Seki, Sendai, JP;
Frontec Incorporated, Tokyo, JP;
Other;
Abstract
An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).