The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1998
Filed:
Jan. 23, 1995
Hiroki Hamada, Hirakata, JP;
Kiichi Hirano, Kobe, JP;
Nobuhiro Gouda, Kobe, JP;
Hisashi Abe, Gifu-ken, JP;
Eiji Taguchi, Hashima, JP;
Nobuhiko Oda, Hashima, JP;
Yoshihiro Morimoto, Inazawa, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.