The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1998
Filed:
Aug. 02, 1996
James Stuart Dunn, Jericho, VT (US);
Michael Dean Hulvey, Burlington, VT (US);
Eric David Johnson, Westford, VT (US);
Robert Andrew Kertis, Rochester, MN (US);
Kenneth Knetch Kieft, III, Essex Junction, VT (US);
Albert Edson Lanpher, Waterville, VT (US);
Nicholas Theodore Schmidt, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
High-performance bipolar transistors with improved wiring options and fabrication methods therefore are set forth. The bipolar transistor includes a base contact structure that has multiple contact pads which permit multiple device layouts when wiring to the transistor. For example, a first device layout may comprise a collector-base-emitter device layout, while a second device layout may comprise a collector-emitter-base device layout. More specifically, the base contact structure at least partially surrounds the emitter and has integral contact pads which extend away from the emitter. Further, sections of the base contact structure are disposed on an insulating layer outside of the perimeter of the base region of the transistor, while other sections directly contact the base region. Specific details of the bipolar transistor, and fabrication methods therefore are also set forth.