The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1997
Filed:
Nov. 03, 1995
Martin C Peckerar, Silver Spring, MD (US);
Christie Marrian, Marbury, MD (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
The present invention is a fiducial electron beam detector including an etron beam absorber layer having one or more apertures for transmitting an electron beam, and a conductive or semiconductive structure adapted to produce a current in response to an incident electron beam transmitted through an aperture. When electrons from the electron beam strike this structure, a flow of electrons is created which may be monitored using any of the known methods for detecting current flow. The present invention is also a fiducial electron beam detector including a first semiconductor layer for electron collection, a first responsive layer of essentially parallel lines of conductive material oriented in one direction, where these conductive lines are separated by nonconductive material, and each of the lines is adapted for producing a current responsive to an electron beam, a second semiconductor layer adapted for electron collection, and a second responsive layer of essentially parallel lines of conductive material oriented in another direction, where these conductive lines are separated by nonconductive material, and each of the fines is adapted for producing a current responsive to an electron beam. Diode layers separate each of the semiconductor and responsive layers, to restrict current flow to a single direction. The present invention is also a method for monitoring the position of an electron beam on a film, in an area wherein the beam can create a useful image on the film.