The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1997
Filed:
Apr. 01, 1996
Applicant:
Inventor:
Masanobu Zenke, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438653 ; 437685 ;
Abstract
In a method and an apparatus for producing a semiconductor device, means is provided for adding an oxidizing gas to an inactive gas to be fed to the sides of a wafer. Before a metal film is formed on the front of the wafer, the oxidizing gas oxidizes silicon exposed on the sides and rear of the wafer and unprotected from a raw material gas, thereby forming a silicon oxide film. Hence, even when the metal film is formed on the front of the wafer via an adhesion layer, it is scarcely formed on the sides and rear of the wafer and turns out a minimum of particles. This prevents the metal film from easily coming off without resorting to a great amount of inactive gas.