The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1997
Filed:
Nov. 06, 1995
Applicant:
Inventor:
Masanobu Zenke, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 60 ; 437919 ; 437977 ;
Abstract
Crystal grains of a lower polysilicon layer is grown through an annealing or an ion-implantation before separation of the lower polysilicon layer into doped silicon pieces, an upper polysilicon layer with small crystal grains is deposited over the doped silicon pieces so as to wave at long intervals, and the upper polysilicon layer is roughened so as to wave at short intervals, thereby increasing the surface area of an accumulating electrode of a capacitor.