The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 1997
Filed:
Nov. 12, 1996
Tadashi Fukase, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor integrated circuit device which stores information by storing charges in a capacitor portion formed on a semiconductor substrate is provided. This method includes the steps of depositing a conductive film for forming a lower electrode of storage node capacitor portion on an insulating interlayer film formed with a contact hole for forming a contact that connects the capacitor portion with the substrate, depositing a cap oxide film on the conductive film and planarizing the cap oxide film, applying a resist on the planarized cap oxide film to a uniform thickness and forming a pattern mask of the storage node capacitor portion from the resist, etching the cap oxide film and the conductive film by using the pattern mask as a mask, and forming a lower electrode of the storage node capacitor portion by removing the cap oxide film.