The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1997
Filed:
Nov. 16, 1995
Applicant:
Inventor:
Kuniko Miyakawa, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257751 ; 257752 ; 257757 ; 257761 ; 257762 ; 257763 ; 257915 ;
Abstract
In a semiconductor device having a wiring groove in alignment with a contact hole, a wiring structure includes a diffusion preventing film formed on the bottom and side walls of the wiring groove, the diffusion preventing film being composed of a barrier metal for preventing diffusion of Cu and an element which cooperates with Cu so as to form a eutectic Cu-alloy having a eutectic temperature of not higher than 850.degree. C. A Cu film is formed on the diffusion preventing film so as to fill up the wiring groove, so that Cu and the above mentioned element actually form the eutectic Cu-alloy having the eutectic temperature of not higher than 850.degree. C.