The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 1997

Filed:

Jan. 30, 1996
Applicant:
Inventors:

David Laurant Harmon, Essex Junction, VT (US);

Nancy Tovey Pascoe, South Burlington, VT (US);

John Francis Rembetski, Austin, TX (US);

Pai-Hung Pan, Boise, ID (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 67 ; 437 73 ; 1566431 ; 148D / ;
Abstract

A method for forming high aspect ratio, deep trenches in a semiconductor substrate with a composite etch mask structure including a thermally grown oxide surface layer as a plasma etch mask.


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