The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 1997
Filed:
Mar. 24, 1995
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437228 ; 437229 ; 430316 ; 430330 ; 1566431 ; 1566531 ; 15665911 ;
Abstract
A method of manufacturing a semiconductor device including the steps of: forming an insulating film on a silicon substrate; forming a resist pattern on the insulating film; etching the insulating film by using the resist pattern as an etching mask to expose a surface of the silicon substrate; and ashing the resist pattern and etching a surface layer at the exposed surface of the silicon substrate at the same time. The ashing/etching step may be performed first at a high temperature at or above 40.degree. C. and then at a lower temperature.