The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 1997
Filed:
Dec. 29, 1995
Applicant:
Inventor:
Lai-Juh Chen, Hsin-chu, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566431 ; 1566571 ; 216 38 ; 437228 ;
Abstract
An improved method of gap filling in the dielectric layer is described. Semiconductor device structures are formed in and on a semiconductor substrate and the top surface of the substrate is planarized. A conducting layer is deposited over the surface of the substrate and patterned. A layer of TEOS oxide is deposited over the patterned conducting layer by plasma enhanced chemical vapor deposition. While TEOS plasma residual remains on the wafer, the oxide is etched wherein the TEOS plasma protects the surface of the oxide layer. The combination of the TEOS deposition and etching processes results in a gap-filling dielectric.