The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 1997

Filed:

Mar. 17, 1995
Applicant:
Inventor:

Hisashi Muraoka, Yokohama, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23G / ; B08B / ;
U.S. Cl.
CPC ...
134-3 ; 134 28 ; 134 33 ; 134 41 ; 510175 ; 510257 ;
Abstract

The present invention provides a method for cleaning a silicon wafer with a cleaning fluid, comprising 35 to 65% by weight of HNO.sub.3, 0.05 to 0.5% by weight of HF, 0.05 to 0.5% by weight of HCl, 0.002 to 0.1% by weight of a surface-active agent, and water. The silicon wafer cleaning method involves comprising treating the surface of a silicon wafer with said cleaning fluid. According to the present method, etching of the silicon wafer surface can be carried out simply with the amount of the etching being controlled to several tens .ANG., and particularly about 20 to 30 .ANG., and without damage to the smoothness of the surface. In addition, contamination with gold and other heavy metals of the order of 10.sup.12 atoms/cm.sup.2 can be decreased to not more than 1/100.


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Muraoka, Hisashi. (1997). Silicone wafer cleaning method (U.S. Patent No. 5681398). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5681398

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