The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 1997
Filed:
Sep. 12, 1995
Hitoshi Higurashi, Yokohama, JP;
Akira Toriumi, Yokohama, JP;
Fumiko Yamaguchi, Noda, JP;
Kiyoshi Kawamura, Tokyo, JP;
Alfred Hubler, Urbana, IL (US);
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
According to the present invention, there is provided a correlation tunnel device capable of achieving a low power consumption without decreasing a drive force when a large-scale-integrated circuit is constituted. A correlation tunnel device according to the present invention comprises a first quantum dot structure including a first carrier confinement region having at least two discrete energy levels, a carrier conduction region adjacent to the first carrier confinement region, and a tunnel barrier arranged only between the first carrier confinement region and the conduction region, and a second quantum dot structure including a second carrier confinement region having at least two discrete energy levels, a carrier conduction region adjacent to the second carrier confinement region, and a tunnel barrier arranged only between the second carrier confinement region and the conduction region, wherein an energy level occupied by the carrier in the first carrier confinement region and an energy level occupied by the carrier in the second carrier confinement region have a correlation.