The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 1997
Filed:
Jan. 30, 1996
Applicant:
Inventors:
Klaus Rodde, Carquefou, FR;
Olivier Le Neel, Le Cellier, FR;
Assignee:
Matra MHS, Nantes, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 48 ; 437 52 ; 437 45 ;
Abstract
A method of fabricating a read only memory consisting of a matrix of arrays of enhancement-mode or depletion-mode programmed MOS transistors that consists, on a silicon substrate (SU) of a first conduction type, in defining by masking, retrograde wells of the same conduction type as that of the substrate, and then retrograde wells of conduction type opposite to that of the substrate. Removal of the protective oxide allows thus to predefine the enhancement-mode and depletion-mode transistors.
Rodde, Klaus. (1997). Method of fabricating a read only memory in mos technology, and memory (U.S. Patent No. 5679594). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5679594
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