The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 1997
Filed:
Apr. 29, 1996
Applicant:
Inventors:
Fang Hong Gn, Singapore, SG;
Sekar Ramamoorthy, Singapore, SG;
Lap Chan, Singapore, SG;
Che-Chia Wei, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing PTE LTD, Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437194 ; 437192 ; 437190 ;
Abstract
A method for fabricating an improved connection between active device regions in silicon, to an overlying metallization level, has been developed. The method produces contacts with superior and improved barrier integrity, which permits silicon device exposure to extended thermal process times and/or higher temperature processes without metal penetration into the silicon contact junction regions. The critical element is the addition of a conformal CVD tungsten layer in the multilayer barrier structure.