The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 1997
Filed:
Mar. 04, 1996
Nae-in Lee, Suwon, KR;
Moon-han Park, Seoul, KR;
Young-wug Kim, Suwon, KR;
Kwan-young Oh, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for efficiently removing by-products produced in dry-etching a fabricated structure of a semiconductor device, particularly, a polycide structure. The method includes the steps of sequentially forming a polysilicon layer and a refractory metal silicide layer to overlie previously fabricated structures on a semiconductor substrate, dry-etching the polysilicon layer and the refractory metal silicide layer to form a patterned polysilicon layer and a patterned refractory metal silicide layer, and thermal treating the resultant structure to remove at least one kind of by-product produced in the dry-etching step at a temperature higher than the boiling point of any by-product.