The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1997
Filed:
Jun. 28, 1996
Applicant:
Inventors:
James B Kruger, Half Moon Bay, CA (US);
S Jeffrey Rosner, Palo Alto, CA (US);
Iton Wang, Cupertino, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257751 ; 257753 ; 257767 ; 257763 ; 257915 ;
Abstract
A barrier metal integrated circuit structure, including relatively thin, highly nitrided layers of TiW (i.e., TiW:N) straddling a central conductor layer, and in turn each being straddled by adjacent layers of relatively thick substantially un-nitrided TiW material, and a method for its fabrication including deposition of layers of TiW and TiW:N, the latter in a N.sub.2 dominated atmosphere and/or under backbias conditions effective for establishing at least a saturated level of nitrogen into the TiW:N, resulting in an effective barrier to migration of conductor materials from the conductor layer.