The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 1997

Filed:

Nov. 09, 1995
Applicant:
Inventors:

Tohru Ogawa, Kanagawa, JP;

Hiroyuki Nakano, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430318 ; 4302721 ; 4302751 ; 430512 ; 430524 ; 430525 ; 430526 ; 430950 ;
Abstract

A process for formation of a metal pattern comprising the steps of forming a silicide metal film on an underlying substrate, forming an anti-reflection film on the underlying substrate on which the silicide metal film is formed, forming a resist film on the anti-reflection film, patterning the resist film by photolithography to form a predetermined pattern, and using the thus patterned resist film as a mask and etching the silicide metal film on the underlying substrate, wherein the optical constants and the thickness of the anti-reflection film are determined to give the smallest standing wave effect at the time of photolithography in accordance with the type of the silicide metal film.


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