The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 1997
Filed:
May. 24, 1993
Kazuhiro Mochizuki, Kodaira, JP;
Shigeo Goto, Tsukuba, JP;
Chushirou Kusano, Tokorozawa, JP;
Masahiko Kawata, Hachioji, JP;
Hiroshi Masuda, Hachioji, JP;
Katsuhiko Mitani, Kodaira, JP;
Susumu Takahashi, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device comprises a semiconductor substrate formed by a first single crystalline semiconductor material and semiconductor layers formed on the semiconductor substrate by a second single crystalline semiconductor material doped with an element which can easily surface segregate. The surface of the semiconductor substrate is formed of a crystalline plane substantially equivalent to a facet plane which is formed on the surface of the second single crystalline semiconductor material if the second single crystalline semiconductor material is epitaxially grown with being doped with the element on a (100) plane of the first single crystalline semiconductor material.