The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 1997
Filed:
Mar. 30, 1995
Hitachi Chemical Co. Ltd., , JP;
Abstract
A method of growing a single crystal of a rare-earth silicate is disclosed which comprises heating raw materials in a crucible to thereby obtain a melt of the raw materials, contacting a lower end of a seed crystal with the melt and pulling the seed crystal to thereby grow a single crystal, and wherein the pulling is conducted along an axis of pulling having a gradient of at least 30.degree. from the b-axis ([010] axis) of the single crystal and a gradient of at least 25.degree. from the c-axis ([001] axis) of the single crystal. The invention also provides a method of machining a single crystal of a rare-earth silicate into a cylindrical form, comprising grinding a cylinder whose axis is directed so as to have a gradient of 0.degree. to 65.degree. from the c-axis ([001] axis) of the single crystal. Further, the invention provides a single crystal of a rare-earth silicate machined into a configuration having at least one plane, wherein the plane most close to the (100) plane of the single crystal has a gradient of at least 5.degree. from the (100) plane.