The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 1997

Filed:

Jul. 20, 1995
Applicant:
Inventors:

Seiichi Miyazawa, Zama, JP;

Mitsuru Ohtsuka, Yokohama, JP;

Natsuhiko Mizutani, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01S / ;
U.S. Cl.
CPC ...
257627 ; 257 14 ; 257 23 ; 257102 ; 372 45 ; 372 46 ;
Abstract

A semiconductor device has a substrate composed of a semiconductor which has one of sphalerite and diamond crystal structures. The substrate has a plane orientation inclined at 0.5.degree. to 15.degree. with respect to one of {111} and {110} planes indicated by Miller indices. A first semiconductor layer is formed on the substrate. The first semiconductor layer has a sawtooth-shaped first periodic structure consisting of one of the {111} and {110} planes indicated by the Miller indices and at least one plane indicated by another index. A second semiconductor layer is formed on the first semiconductor layer. The second semiconductor layer has a second periodic structure having a phase shifted from a phase of the first periodic structure.


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