The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1997
Filed:
Jul. 29, 1996
Nae Hak Park, Seoul, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A method for forming a Damascene structured multi-layered metal wiring for a semiconductor element, which includes the steps for forming a first insulating layer on the surface of a semiconductor substrate, forming a lower metal wiring pattern on the first insulating layer, forming a second insulating layer on the first insulating layer and the lower metal wiring pattern, forming contacts by subjecting the second insulating layer to etching, successively depositing first and second upper metals over the second insulating layer and the contact, subjecting the second upper metal to etching until the first upper metal is exposed, and forming an upper metal wiring pattern having a double metal structure by subjecting the first upper metal to etching until the second insulating layer is exposed. The upper wiring layer is preferably formed of aluminum deposited by a sputtering method and tungsten deposited by a chemical vapor deposition method.