The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
Dec. 07, 1994
Toshiro Hiramoto, Yokohama, JP;
Nobuo Tamba, Ohme, JP;
Masami Usami, Ohme, JP;
Takahide Ikeda, Tokorosawa, JP;
Kazuo Tanaka, Tokyo, JP;
Atsuo Watanabe, Hitachioota, JP;
Satoru Isomura, Ohme, JP;
Toshiyuki Kikuchi, Ohme, JP;
Toru Koizumi, Musashimurayama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor integrated circuit device includes an element separating first and second grooves formed to surround active regions to be formed with a semiconductor element. In addition a third groove is formed to surround at least a portion of the first groove, when viewed from a plane view. In the semiconductor integrated circuit device, the active regions and an element separating region of a silicon layer are insulated from each other by the separating grooves extending from the main surface of the silicon layer to an underlying insulating layer, and are fed with a common fixed potential.