The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 1997
Filed:
Mar. 01, 1995
Tatsuo Ito, Joetsu, JP;
Shin-Etsu Handotai Co. Ltd., Tokyo, JP;
Abstract
One or a plurality of silicon growth layers are formed on both sides of a silicon base substrate wafer and the product is then divided, with the dividing plane in said silicon base substrate wafer parallel to the main surface, into two pieces to obtain two substrates used for manufacturing silicon semiconductor elements. Said dividing-in-half process is a process in which said silicon base substrate wafer portion is cut along a plane parallel to the main surface, or a process which includes said cutting process followed by a process of treating the cut-surface. Said process which cuts the silicon base substrate wafer portion is a process in which the wafers are cut one by one, or cut after a plurality of them are laminated.