The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 1997
Filed:
Aug. 14, 1995
Gary Steven Tompa, Somerville, NJ (US);
Structured Materials Industries Inc., Piscataway, NJ (US);
Abstract
A process for depositing carbon nitride films on substrates or work pieces by means of plasma assisted energy controlled ion beam deposition. The process produces microscopically smooth, nearly stress free, insulating and transparent carbon nitride thin films at room (or elevated) temperature. In the process the substrate, tool or other component to be coated is placed in a vacuum chamber at room temperature and is acted upon by a source of negative carbon ions and a high flux plasma source of nitrogen radicals. The source of C.sup.- ions is hydrogen free and provides particle energies suitable for the production of films of high quality carbon nitride. The source of the nitrogen flux provides a high density of nitrogen radicals to interact with the C.sup.- ion beam and coat the substrate with carbon nitride. In a further embodiment of the process, which provides an even higher deposition rate, a source of N.sup.+ is added which provides charge neutralization and surface nitridation prior to deposition.