The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 1997
Filed:
Jun. 02, 1995
NEC Corporation, Tokyo, JP;
Abstract
A field emission cold cathode element having a conducting substrate, a dielectric layer which is on the substrate and has holes, emitter electrodes which have a sharp-pointed tip and stand on the substrate in the respective holes in the dielectric layer, and a gate electrode which is on the dielectric layer and has apertures right above the respective holes in the dielectric layer. The tip of each emitter electrode is near or in the aperture in the gate electrode layer. The dielectric layer is largely removed so as to remain only in limited regions around the holes for the respective emitter electrodes, and a gate electrode layer is formed with, in addition to the apertures for the emitter electrodes, a number of holes in regions where the substrate surface is exposed by removal of the dielectric layer. The partial removal of the dielectric and gate electrode layers has the effect of reducing interlayer stresses induced by temperature changes, so that the gate electrode layer can be made desirably thick.