The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 1997
Filed:
Sep. 27, 1995
Masahiko Kobayashi, Fuchu, JP;
Nobuyoki Takahashi, Fuchu, JP;
Anelva Corporation, Fuchu, JP;
Abstract
A method for forming Ti--TiN laminates adapted to reduce the formation of dust particles harmful to semiconductor devices without detriment to productivity, and a magnetron cathode for performing the method are provided. Ti films and TiN films are formed through sputtering of a Ti target using a multi-chamber system comprising at least two chambers each having a magnetron cathode in which a magnet can be moved to accommodate different films. The type of film being formed in each chamber is periodically alternated to prevent a buildup of TiN film adhered to the inner walls of the chambers which peels and causes dust particles.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile