The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 1997
Filed:
Dec. 01, 1995
Majid M Hashemi, Tempe, AZ (US);
Saied N Tehrani, Tempe, AZ (US);
Motorola, Schaumburg, IL (US);
Abstract
A high frequency transistor including a heavily doped first current carrying layer positioned on a substrate and a semi-insulating layer of LTGaAs epitaxially grown on the first layer. The semi-insulating layer is etched, using a layer of AlAs as an etch stop, to define an active region and a first current carrying electrode is grown on the exposed first layer in the active region. A control layer is grown on the semi-insulating layer and the first current carrying electrode, and a second current carrying electrode is grown on the control layer. External contacts are formed on the first current carrying layer, the control layer, and the second current carrying electrode.