The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 1997
Filed:
Sep. 14, 1995
Applicant:
Inventors:
Hiromi Hayashi, Kawasaki, JP;
Atsuo Fushida, Kawasaki, JP;
Tetsuo Izawa, Kawasaki, JP;
Masaki Katsube, Kawasaki, JP;
Tatsuya Yamazaki, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438453 ; 438233 ; 438586 ; 438664 ; 438682 ;
Abstract
On a semiconductor substrate with an exposed silicon region, a metal layer such as Co is deposited and a silicide layer is formed by heat treatment. Thereafter, a metal layer such as Ni and a silicon layer are deposited, and one of them is patterned. The metal layer and silicon layer are heated for silicification to form a local interconnect. A semiconductor device manufacturing method is provided which uses salicide technique and can form a local interconnect of good quality.