The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 1997
Filed:
Dec. 04, 1995
Toshihiko Shiga, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate having a surface; an active layer of a compound semiconductor disposed at the surface of the semiconductor substrate; and a Schottky barrier gate electrode including a multi-layer film alternately laminating a conductive refractory metal compound layer including a first refractory metal (M.sub.1) and a second refractory metal (M.sub.2) layer to three or more layers respectively, disposed on the active layer, thereby forming a Schottky junction with the active layer. The gate resistance of the Schottky barrier gate electrode can be held low and the internal stress can be reduced, whereby peeling off of the can be suppressed.