The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 1997
Filed:
Jul. 06, 1995
Shinichi Watabe, Itami, JP;
Hiroaki Okagawa, Itami, JP;
Takayuki Hashimoto, Kuga, JP;
Kazuyuki Tadatomo, Itami, JP;
Mitsubishi Cable Industries, Ltd., Hyogo, JP;
Abstract
A semiconductor light emitting element comprising a light emitting part comprising an AlGaInP active layer and a AlGaInP cladding layer, which is formed on a GaAs substrate, and an AlGaAs layer and a Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on said light emitting part, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m. According to the present invention, absorption of the emitted light by an electrode contact layer and the occurrence of an interfacial distortion between the electrode contact layer and the layer thereunder can be suppressed, and a semiconductor light emitting element permitting easy production thereof and having a high luminance and a long service life can be provided.