The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1997
Filed:
Aug. 29, 1995
Keiji Mita, Ora-gun, JP;
Osamu Shiroma, Ota, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A photodiode built-in semiconductor device is provided that can prevent internal peripheral circuits from erroneously operating due to incident light entering slantingly, or not perpendicular to a top surface of the semiconductor chip. A semiconductor chip 20 includes a photodiode and its peripheral circuits. The region except for the photodiode is covered with a light shielding film 22 of aluminum metallization. An isolation region (P.sup.+) 23 is arranged at an outermost portion of the chip. A dummy island 24 is formed so as to surround the entire portion of the chip 20. An N.sup.+ -type low resistance region 25 is formed in the surface of the dummy island 24. The dummy photodiode is formed by applying a reverse bias potential across the PN junction defined between the isolation region 23 and the dummy island 24.