The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1997
Filed:
Jun. 24, 1994
Keisuke Shinagawa, Kawasaki, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
The present invention relates to a method of manufacturing a semiconductor device including a process of removing a photoresist mask or a photosensitive polyimide mask remaining after implanting impurity ions into a semiconductor layer or the like, and has an object to prevent generation of oxides of impurities and photoresist explosion and arranging it so that no residue remains. The present invention comprises the steps of forming a mask composed of photosensitive organic matter on a layer, implanting impurity ions into the layer through the mask, and removing the mask through processing including three steps of: exposing the mask to a plasma activated gas containing hydrogen, exposing to the mask to a plasma activated gas containing oxygen, and exposing the mask to a solution containing nitric acid under conditions sufficient to dissolve alumina which had formed on the mask during exposure of the mask to oxygen.