The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1997
Filed:
Jan. 25, 1996
Cha-young Yoo, Kyungki-do, KR;
Young-sun Kim, Kyungki-do, KR;
Young-wook Park, Kyungki-do, KR;
Se-jin Shim, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for manufacturing a high capacitance capacitor having an HSG film formed on a stack-structured lower storage node, includes the step of forming insulating films for protecting the HSG film. In the present invention the lower storage node and the HSG film formed thereon are not damaged during an etch-back process. The HSG film formed on the lower storage node is protected by means of the insulating films, thereby preventing a decrease in capacitor capacitance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile