The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 1997
Filed:
May. 09, 1995
Applicant:
Inventor:
Naoki Ito, Kawasaki, JP;
Assignee:
Fuji Electric Co., Ltd., Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438592 ; 438595 ; 438655 ; 438664 ;
Abstract
In a method of the invention, a semiconductor device is manufactured. A partially poly-crystalline silicon thin film is formed on a substrate by a CVD method at a film formation temperature of 550.degree. C. or lower by using a source gas containing silane. Then, a metal silicide film is formed on the silicon thin film at a film formation temperature of 500.degree. C. or lower to form a film lamination. After patterning and etching the film lamination, the film lamination is heat treated and simultaneously crystallized to integrally bond the film lamination.