The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1997
Filed:
Dec. 20, 1995
Kan Takeuchi, Kodaira, JP;
Katsumi Matsuno, Kokubunji, JP;
Kazuhiko Kajiyama, Iruma, JP;
Osamu Nagashima, Hamura, JP;
Masatoshi Hasegawa, Ome, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor memory which includes a plurality of memory cells each having first and second capacitors connected in series and a field-effect transistor whose source or drain is connected to a node between the first and second capacitors. The memory cells are arranged at intersections of bit lines and word lines thereby forming a matrix. The first capacitor of each memory cell is a ferroelectric capacitor using a ferroelectric material as an insulating film. A plate electrode of the first capacitor of each memory cell is held at a first potential when the memory is operated in a first mode and the plate electrode of the first capacitor is held at a second potential when the memory is operated in a second mode. The first potential is different from the second potential.