The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1997
Filed:
Feb. 09, 1996
Applicant:
Inventors:
Ching-Fa Yeh, Hsinchu, TW;
Shyue S Lin, Hsinchu, TW;
Assignee:
National Science Council, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H / ;
U.S. Cl.
CPC ...
427539 ; 427535 ; 427569 ; 427574 ; 427579 ;
Abstract
A silicon dioxide layer grown by liquid phase deposition is, subjected to an oxygen or hydrogen plasma treatment to enhance the physical and electrical properties thereof. The plasma treatment is carried out at a temperature of about 300.degree. C.