The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
May. 11, 1993
Tadashi Shibata, Sendai, JP;
Tadahiro Ohmi, Sendai, JP;
Tadashi Shibata, Sendai, JP;
Abstract
A semiconductor device of this invention comprises on a substrate a first semiconductor region of one conductive type, first source and drain regions of the opposite conductive type formed in said semiconductor region, a first gate electrode formed in a region separating said source and drain regions, the first gate electrode being electrically floating through an insulating film, and at least two second gate electrodes connected to said first gate electrode by capacitive coupling, wherein an inversion layer is formed under said first gate electrode and said first source and drain regions are electrically connected together only when a predetermined threshold value is exceeded by the absolute value of a value obtained by linearly summing up the weighted voltages applied to said second gate electrodes.