The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
Feb. 02, 1995
Applicant:
Inventors:
Gary L Loper, Huntington Beach, CA (US);
Martin D Tabat, Nashua, NH (US);
Assignee:
The Aerospace Corporation, El Segundo, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C03C / ; C03C / ; C23F / ; B44C / ;
U.S. Cl.
CPC ...
216 63 ; 216 65 ; 1566431 ;
Abstract
In a laser assisted semiconductor etching process, a krypton fluoride excimer laser operating at 248 nm excites a carbonyl dichloride COCl.sub.2 radical precursor gas which decomposes into carbon monoxide and also atomic chlorine that bonds to laser illuminated surface layer materials of semiconductor devices to create gaseous chlorides which desorb to perfect selective etching, the surface layer material being Cu, Al, amphorous silicon, Ga.sub.(x) Al.sub.(1-x) As, CuIn.sub.(x) Ga.sub.(1-x) Se.sub.2, CdZnS, ZnO and other materials useful in the manufacture of semiconductor devices and solar cells.