The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1997
Filed:
Feb. 21, 1995
Masayuki Yamada, Tokyo, JP;
Akira Ishikawa, Tokyo, JP;
Tadahiko Saito, Tokyo, JP;
Kiyoshi Nakase, Taki-gun, JP;
Katsuyuki Hatanaka, Tsu, JP;
Hiroshi Inaba, Matsusaka, JP;
Central Glass Company Limited, Ube, JP;
Abstract
A method of forming a metal oxide film on a substrate by a reactive DC sputtering device with introducing thereinto a reaction gas and an inert gas includes the steps of: (a) regulating a flow rate ratio or a pressure ratio of the reaction gas to the inert gas to not higher than 0.4; (b) increasing a power input to the sputtering device to a first predetermined value such that a discharge voltage increases to a maximum value and then decreases from the maximum value; and (c) decreasing the power input from the first predetermined value to a second predetermined value immediately after the discharge voltage starts to decrease from the maximum value so as to suppress a metal formation on the substrate, the steps (b) and (c) being alternately repeated for a certain period for completing the metal oxide formation on the substrate.