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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5606184 B1

PDFFull Text
Date of Patent:
Feb. 25, 1997

Filed:

May. 04, 1995

Heterostructure field effect device having refractory ohmic contact

Applicant:
Inventors:

Jonathan K Abrokwah, Tempe, AZ (US);

Jenn-Hwa Huang, Gilbert, AZ (US);

William J Ooms, Chandler, AZ (US);

Carl L Shurboff, Grayslake, IL (US);

Jerald A Hallmark, Gilbert, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:

Bernstein; Aaron B.

Chen; George C.

Primary Examiner:

Stephen Meier

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257192 ; 257194 ; 257 27 ;
Abstract

A complementary III-V heterostructure field effect device includes the same refractory ohmic material for providing the contacts (117, 119), to both the N-type and P-type devices. Furthermore, the refractory ohmic contacts (117, 119) directly contact the InGaAs channel layer (16) to provide improved ohmic contact, despite the fact that the structure incorporates an advantageous high aluminum composition barrier layer (18) and an advantageous GaAs cap layer (20).

Find Patent Forward Citations

Abrokwah, Jonathan. (1997). Heterostructure field effect device having refractory ohmic contact (U.S. Patent No. 5606184). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5606184

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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