The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1997
Filed:
Nov. 23, 1994
Applicant:
Inventors:
Chao-Yang Chen, Hsin-chu, TW;
Fu-Yang Yu, Hsin-chu, TW;
Assignee:
United Microelectronics Corporation, Hsin-chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437101 ; 437233 ; 427585 ; 427587 ; 427588 ;
Abstract
A novel process for depositing amorphous silicon has been described. The process features the homogeneous reaction of, decomposition of SiH2 and deposition of amorphous silicon, in a horizontal LPCVD reaction chamber. The SiH2 is produced by initially breaking down SiH4 in a heated autoclave apparatus, and then transferring the SiH2 to the LPCVD system through heated feed lines. This homogeneous process results in excellent thickness and resistivity uniformity for wafers placed along the horizontal axis of the LPCVD chamber.