The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1997
Filed:
May. 11, 1995
Applicant:
Inventors:
Jitendra S Goela, Andover, MA (US);
Lee E Burns, Woburn, MA (US);
Raymond L Taylor, Saugus, MA (US);
Assignee:
CVD, Incorporated, Woburn, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437100 ; 117101 ; 117104 ; 117951 ;
Abstract
.beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.
Goela, Jitendra. (1997). Chemical vapor deposition-produced silicon carbide having improved (U.S. Patent No. 5604151). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5604151
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile