The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1997
Filed:
Apr. 10, 1995
Hitomi Watanabe, Chiba, JP;
Hiroaki Takasu, Chiba, JP;
Seiko Instruments Inc., , JP;
Abstract
A semiconductor device comprises a silicon semiconductor substrate and an insulating film formed on a surface of the silicon semiconductor substrate. One of a surface of the silicon semiconductor substrate or a surface of the insulating film is provided with at least one step portion. A polycrystalline silicon layer is formed uniformly on at least a side surface of the step portion and a top surface of the insulating film. The polycrystalline silicon layer which is formed on the side surface of the step portion comprises a resistance element, and a portion of the polycrystalline silicon layer which is formed on the top surface of the insulating film is doped with an impurity to form a conductive element. By this construction, the area occupied by the load devices on the semiconductor substrate is effectively reduced, thereby increasing the packing density of the semiconductor device.