The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 1997

Filed:

May. 12, 1995
Applicant:
Inventors:

Hugo A Santini, San Jose, CA (US);

Clinton D Snyder, Los Gatos, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B / ;
U.S. Cl.
CPC ...
2960314 ; 2960315 ;
Abstract

In the manufacture of a thin-film magnetic head having a vertical gap, auxiliary support is provided at the ends of a gap wall prior to formation of the magnetic poles. In a preferred embodiment, a pit is defined in a substrate and a release layer is deposited on the substrate followed by a layer of alumina. A recess is then etched through the alumina layer to the release layer in the pit. A partial layer of polymer or metal is deposited with a vertical edge across the median of the pit and recess. A layer of nonmagnetic wall material such as silicon oxide is deposited which after etching leaves a wall against the vertical edge of the partial layer. After removal of the partial layer, a vertical wall extends transversely across the recess and pit with the ends of the wall anchored and supported at the recess sidewalls. Alternatively, a pedestal may be provided in the recess to support each end of the wall. The magnetic poles are then formed simultaneously on either side of the wall. Other thin film layers are then deposited in an appropriate sequence of steps to complete the desired vertical gap, horizontal head structure. The substrate is separated from the completed thin film structure by dissolving the release layers.


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